PART |
Description |
Maker |
IS61C1024 IS61C1024-12H IS61C1024-12HI IS61C1024-1 |
RES POWER .050 OHM 2W 1% SMT 128K X 8 STANDARD SRAM, 15 ns, PDSO32 128K x 8 HIGH-SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 20 ns, PDSO32 128K x 8 HIGH-SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 25 ns, PDSO32 128K x 8 HIGH-SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32 IC-1MB FAST SRAM 128K X 8 STANDARD SRAM, 15 ns, PDIP32 RES POWER .030 OHM 2W 5% SMT RES POWER .020 OHM 2W 5% SMT
|
Integrated Silicon Solution, Inc. ETC[ETC] Integrated Silicon Solution Inc
|
IS61LV12816LL-12T IS61LV12816LL-12BI IS61LV12816LL |
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PQFP44 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
W24010AC |
128K×8 High-Speed CMOS Static RAM(128K×8位高速CMOS静态RAM) 8 × 128K的高速CMOS静态RAM28K的8位高速的CMOS静态RAM)的
|
Winbond Electronics, Corp.
|
EDI8L32128V12AC EDI8L32128V12AI EDI8L32128V15AC ED |
12ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM 15ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM 20ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM
|
White Electronic Designs
|
K6R3024V1D-HI12 K6R3024V1D K6R3024V1D-HC09 K6R3024 |
From old datasheet system 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) 128K的24位高速CMOS静态RAM.3V的工作) 128K X 24 MULTI DEVICE SRAM MODULE, 10 ns, PBGA119
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
29C010PI-1 29C010PI-2 29C010PI-3 29C010JC-1 29C010 |
High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM High speed 150 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM High speed 200 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns. High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns. High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns.
|
Turbo IC
|
T14L2M16A-12C T14L2M16A-10S T14L2M16A |
128K X 16 HIGH SPEED CMOS STATIC RAM
|
etc Taiwan Memory Technology Electronic Theatre Controls, Inc.
|
T14L1024N-10W |
128K X 8 HIGH SPEED CMOS STATIC RAM
|
Taiwan Memory Technolog...
|
IS61WV12816BLL IS64WV12816BLL IS64WV12816BLL-15BA3 |
128K x 16 HIGH-SPEED CMOS STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
IS63WV1288DALL/DALS IS63WV1288DBLL/DBLS IS64WV1288 |
128K x 8 HIGH-SPEED CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
LY611024JL-12LL LY611024JL-12LLE LY611024JL-12LLET |
128K X 8 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|